BaTiO3 (BTO) and LaxSr1 − xTiO3 (x ≤ 0.15) perovskite heterostructures are deposited epitaxially on SrTiO3 (STO)-buffered Si(001) via atomic layer deposition (ALD) to explore the formation of a quantum metal layer between a ferroelectric film and silicon. X-ray diffraction and scanning transmission electron microscopy show the crystallinity of the heterostructure deposited by ALD. After postdeposition annealing of the La-doped STO film in ultrahigh vacuum at 600 °C for 5 min, x-ray photoelectron spectra show the lack of La-dopant activation when the film is deposited on 10 nm-thick BTO. The same postdeposition annealing condition activates the La-dopant when LaxSr1 − xTiO3 films are deposited on STO-buffered Si(001) surfaces consisting of 2.8 nm of STO(001) on Si(001). Annealing of LaxSr1 − xTiO3 films sandwiched between BTO and STO-buffered Si(001) layers in air at temperatures ≤350 °C preserves the La-dopant activation. Piezoresponse force microscopy demonstrates the ferroelectric behavior of BTO films grown on LaxSr1 − xTiO3 surfaces. Sheet resistance and capacitance-voltage measurements further demonstrate the conductivity of the LaxSr1 − xTiO3 films sandwiched between the BTO film and the Si(001) substrate.
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Epitaxial integration of ferroelectric and conductive perovskites on silicon
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March 2020
Research Article|
January 13 2020
Epitaxial integration of ferroelectric and conductive perovskites on silicon
Special Collection:
Special Topic Collection on Atomic Layer Deposition (ALD)
Edward L. Lin
;
Edward L. Lin
a)
1
McKetta Department of Chemical Engineering, University of Texas at Austin
, Austin, Texas 78712
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Agham B. Posadas;
Agham B. Posadas
2
Department of Physics, University of Texas at Austin
, Austin, Texas 78712
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Lu Zheng;
Lu Zheng
2
Department of Physics, University of Texas at Austin
, Austin, Texas 78712
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Hsin Wei Wu;
Hsin Wei Wu
3
School of Engineering for Matter, Transport and Energy, Arizona State University
, Tempe, Arizona 85287
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Pei-Yu Chen;
Pei-Yu Chen
1
McKetta Department of Chemical Engineering, University of Texas at Austin
, Austin, Texas 78712
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Brennan M. Coffey;
Brennan M. Coffey
1
McKetta Department of Chemical Engineering, University of Texas at Austin
, Austin, Texas 78712
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Keji Lai
;
Keji Lai
2
Department of Physics, University of Texas at Austin
, Austin, Texas 78712
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Alexander A. Demkov
;
Alexander A. Demkov
2
Department of Physics, University of Texas at Austin
, Austin, Texas 78712
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Davis J. Smith;
Davis J. Smith
4
Department of Physics, Arizona State University
, Tempe, Arizona 85287
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John G. Ekerdt
John G. Ekerdt
b)
1
McKetta Department of Chemical Engineering, University of Texas at Austin
, Austin, Texas 78712b)Author to whom correspondence should be addressed: [email protected]
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a)
Present address: Lam Research Corp., Fremont, CA 94538.
b)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the 2020 Special Topic Collection on Atomic Layer Deposition (ALD).
J. Vac. Sci. Technol. A 38, 022403 (2020)
Article history
Received:
October 29 2019
Accepted:
December 12 2019
Citation
Edward L. Lin, Agham B. Posadas, Lu Zheng, Hsin Wei Wu, Pei-Yu Chen, Brennan M. Coffey, Keji Lai, Alexander A. Demkov, Davis J. Smith, John G. Ekerdt; Epitaxial integration of ferroelectric and conductive perovskites on silicon. J. Vac. Sci. Technol. A 1 March 2020; 38 (2): 022403. https://doi.org/10.1116/1.5134077
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