Oxide multilayer heteroepitaxy combining Mott-insulator vanadium dioxide (VO2) films and functional conducting/ferroelectric/dielectric films opens new opportunities in creating functional devices with applicability in the field of nonvolatile memories for neuromorphic devices. The growth of high quality VO2 films is challenging due to the necessity of precise control of the vanadium cation valence state. In this study, the authors report on electrical and structural properties of VO2 thin films deposited on various single crystal oxide substrates commonly used in oxide electronics and on PbZrxTi(1−x)O3/SrRuO3 ferroelectric heterostructures deposited on SrTiO3 and GaScO3 single crystal substrates. The optimized VO2 films exhibit a metal-to-insulator phase transition on all applied substrate/film combinations.
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March 2019
Research Article|
February 12 2019
Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates
Special Collection:
Special Topic Collection on Complex Oxides
Adrian Petraru;
Adrian Petraru
a)
1
Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel
, Kiel 24143, Germany
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Ravi Droopad;
Ravi Droopad
2
Ingram School of Engineering, Texas State University
, San Marcos, Texas 78666
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Hermann Kohlstedt
Hermann Kohlstedt
1
Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel
, Kiel 24143, Germany
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a)
Electronic mail: [email protected]
Note: This paper is part of the Special Topic Collection on Complex Oxides.
J. Vac. Sci. Technol. A 37, 021514 (2019)
Article history
Received:
November 20 2018
Accepted:
January 31 2019
Citation
Adrian Petraru, Ravi Droopad, Hermann Kohlstedt; Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates. J. Vac. Sci. Technol. A 1 March 2019; 37 (2): 021514. https://doi.org/10.1116/1.5082288
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