In this work, the epitaxy of SrTiO3 and BaTiO3 perovskites on the (001)-oriented silicon substrate by molecular beam epitaxy is investigated. The heterostructures are studied by means of various structural and electrical characterization techniques. In this study especially, the authors reveal experimentally by nanobeam electron diffraction analysis the critical thickness prior relaxation of BaTiO3 grown on an SrTiO3/Si pseudosubstrate. They also propose to use a strain mediated superlattice composed of stacked [BaTiO3/SrTiO3] bilayers to prevent misfit dislocation formation. Using this approach, they could demonstrate high quality and dislocation free BaTiO3 ferroelectric layers integrated on silicon as confirmed by piezo-force microscopy techniques.
References
1.
R. J.
Tilley
, Endeavour
14
, 124
(1990
). 2.
R. A.
McKee
, F. J.
Walker
, and M. F.
Chisholm
, Phys. Rev. Lett.
81
, 3014
(1998
). 3.
R. A.
McKee
, F. J.
Walker
, and M. F.
Chisholm
, Science
293
, 468
(2001
). 4.
D. G.
Schlom
, L. Q.
Chen
, X.
Pan
, A.
Schmehl
, and M. A.
Zurbuchen
, J. Am. Ceram. Soc.
91
, 2429
(2008
). 5.
A. A.
Demkov
and A. B.
Posadas
, Integration of Functional Oxides with Semiconductors (Springer, New York, 2014
).6.
C.
Rossel
et al., Appl. Phys. Lett.
89
, 053506
(2006
). 7.
A. S.
Borowiak
, G.
Niu
, V.
Pillard
, G.
Agnus
, Ph.
Lecoeur
, D.
Albertini
, N.
Baboux
, B.
Gautier
, and B.
Vilquin
, Thin Solid Films
520
, 4604
(2012
). 8.
D. T. H.
Giang
, N. H.
Duc
, G.
Agnus
, T.
Maroutian
, and P.
Lecoeur
, J. Sci. Adv. Mater. Devices
1
, 214
(2016
). 9.
K. M.
Rabe
, C. H.
Ahn
, and J. M.-M.
Triscone
, Physics of Ferroelectrics
(Springer, Berlin, 2007
).10.
P.
Ponath
et al., Nat. Commun.
6
, 1
(2015
). 11.
R.
Droopad
, R.
Contreras-Guerrero
, J. P.
Veazey
, Q.
Qiao
, R. F.
Klie
, and J.
Levy
, Microelectron. Eng.
109
, 290
(2013
). 12.
F.
Eltes
et al., International Electron Devices Meeting (IEDM). Technical Digest
, San Francisco
(2018
), pp. 24.5.1
–24.5.4
.13.
M. H. M.
Hsu
, A.
Marinelli
, C.
Merckling
, M.
Pantouvaki
, J.
van Campenhout
, P.
Absil
, and D.
van Thourhout
, Opt. Mater. Express
7
, 2030
(2017
). 14.
F.
Amy
, A. S.
Wan
, A.
Kahn
, F. J.
Walker
, and R. A.
McKee
, J. Appl. Phys.
96
, 1635
(2004
). 15.
H.
Wu
, S.
Lu
, T.
Aoki
, P.
Ponath
, J. G.
Ekerdt
, A. A.
Demkov
, M.
McCartney
, and D.
Smith
, Appl. Phys. Lett.
110
, 252901
(2017
). 16.
C.
Merckling
, G.
Saint-Girons
, C.
Botella
, G.
Hollinger
, M.
Heyns
, J.
Dekoster
, and M.
Caymax
, Appl. Phys. Lett.
98
, 092901
(2011
). 17.
M.-H. M.
Hsu
et al., J. Appl. Phys.
120
, 225114
(2016
). 18.
G.
Niu
, S.
Yin
, G.
Saint-Girons
, B.
Gautier
, P.
Lecoeur
, V.
Pillard
, G.
Hollinger
, and B.
Vilquin
, Microelectron. Eng.
88
, 1232
(2011
). 19.
L.
Mazet
, S. M.
Yang
, S. V.
Kalinin
, S.
Schamm-Chardon
, and C.
Dubourdieu
, Sci. Technol. Adv. Mater.
16
, 036005
(2015
). 20.
M. H. M.
Hsu
et al., Appl. Phys. Express
10
, 065501
(2017
). 21.
R.
Contreras-Guerrero
, J. P.
Veazey
, J.
Levy
, and R.
Droopad
, Appl. Phys. Lett.
102
, 2
(2013
). 22.
H. W.
Wu
, T.
Aoki
, A. B.
Posadas
, A. A.
Demkov
, and D. J.
Smith
, Appl. Phys. Lett.
108
, 091605
(2016
). 23.
H. P.
Sun
, X. Q.
Pan
, J. H.
Haeni
, and D. G.
Schlom
, Appl. Phys. Lett.
85
, 1967
(2004
). 24.
P.
Castera
, A. M.
Gutierrez
, D.
Tulli
, S.
Cueff
, R.
Orobtchouk
, P.
Rojo Romeo
, G.
Saint-Girons
, and P.
Sanchis
, IEEE Photonics Technol. Lett.
28
, 990
(2016
). 25.
K. J.
Kormondy
et al., Microelectron. Eng.
147
, 215
(2015
). 26.
S.
Abel
, M.
Sousa
, C.
Rossel
, D.
Caimi
, M. D.
Rossell
, R.
Erni
, J.
Fompeyrine
, and C.
Marchiori
, Nanotechnology
24
(2013
). 27.
S.
Abel
et al., Nat. Mater.
18
, 42
(2019
). 28.
C.
Dubourdieu
et al., Nat. Nanotechnol.
8
, 748
(2013
). 29.
M.
Scigaj
et al., Appl. Phys. Lett.
109
, 122903
(2016
). 30.
Z.
Yu
et al., Thin Solid Films
462–463
, 51
(2004
). 31.
Y.
Wei
et al., J. Vac. Sci. Technol. B
20
, 1402
(2002
). 32.
G.
Niu
, G.
Saint-Girons
, B.
Vilquin
, G.
Delhaye
, J.-L.
Maurice
, C.
Botella
, Y.
Robach
, and G.
Hollinger
, Appl. Phys. Lett.
95
, 062902
(2009
). 33.
T.
Suzuki
, Y.
Nishi
, and M.
Fujimoto
, Philos. Mag. A
79
, 2461
(1999
). 34.
H. P.
Sun
, W.
Tian
, X. Q.
Pan
, J. H.
Haeni
, and D. G.
Schlom
, Appl. Phys. Lett.
84
, 3298
(2004
). 35.
H.
Kurata
, S.
Isojima
, M.
Kawai
, Y.
Shimakawa
, and S.
Isoda
, J. Microsc.
236
, 128
(2009
). 36.
R.
Droopad
et al., J. Crystal Growth
251
, 638
(2003
). 37.
Y.-H.
Shin
, I.
Grinberg
, W.
Chen
, and A. M.
Rappe
, Nature
449
, 881
(2007
). 38.
G.
Delhaye
, C.
Merckling
, M.
El-Kazzi
, G.
Saint-Girons
, M.
Gendry
, Y.
Robach
, G.
Hollinger
, L.
Largeau
, and G.
Patriarche
, J. Appl. Phys.
100
, 124109
(2006
). 39.
G.
Saint-Girons
et al., Chem. Mater.
28
, 5347
(2016
). © 2019 Author(s).
2019
Author(s)
You do not currently have access to this content.
