In case of using pure chlorine chemistry, Ge etching reactivity is three times higher than Si etching reactivity because of the larger lattice spacing in Ge. As a result, during the chlorine plasma etching of a Ge Fin structure, there are serious problems such as a large side-etching and large surface roughness on the Ge sidewall. Conversely, the authors found that several-ten nanometer-width Ge Fin structures with defect-free, vertical, and smooth sidewalls were successively delineated by chlorine neutral beam etching. Based on these results, the problems caused by chlorine plasma etching are considered to be due to the enhancement of chemical reactivity caused by defect on the sidewall with the irradiation of ultraviolet/vacuum ultra violet (UV/VUV) photons. Namely, it is clarified that the neutral beam etching could achieve real atomic layer etching by controlling the defect without any UV/VUV photons on the sidewall surface for future nanoscale Ge Fin structures.
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Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam
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March 2019
Research Article|
January 28 2019
Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam
Special Collection:
2019 Special Collection on Atomic Layer Etching (ALE)
Daisuke Ohori;
Daisuke Ohori
1
Institute of Fluid Science, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Takuya Fujii;
Takuya Fujii
1
Institute of Fluid Science, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Shuichi Noda;
Shuichi Noda
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
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Wataru Mizubayashi;
Wataru Mizubayashi
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
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Kazuhiko Endo;
Kazuhiko Endo
1
Institute of Fluid Science, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
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En-Tzu Lee;
En-Tzu Lee
1
Institute of Fluid Science, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Yiming Li;
Yiming Li
3
Department of Electrical and Computer Engineering, National Chiao Tung University
, Hsinchu 300, Taiwan
4
Center for mmWave Smart Radar System and Technologies, National Chiao Tung University
, Hsinchu 300, Taiwan
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Yao-Jen Lee;
Yao-Jen Lee
5
National Nano Device Laboratories
, Hsinchu 30010, Taiwan
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Takuya Ozaki;
Takuya Ozaki
1
Institute of Fluid Science, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Seiji Samukawa
Seiji Samukawa
a)
1
Institute of Fluid Science, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
3
Department of Electrical and Computer Engineering, National Chiao Tung University
, Hsinchu 300, Taiwan
4
Center for mmWave Smart Radar System and Technologies, National Chiao Tung University
, Hsinchu 300, Taiwan
6
Advanced Institute for Materials Research, Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
a)Author to whom correspondence should be addressed: samukawa@ifs.tohoku.ac.jp
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a)Author to whom correspondence should be addressed: samukawa@ifs.tohoku.ac.jp
Note: This paper is part of the 2019 special collection on Atomic Layer Etching (ALE).
J. Vac. Sci. Technol. A 37, 021003 (2019)
Article history
Received:
November 02 2018
Accepted:
January 04 2019
Citation
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, En-Tzu Lee, Yiming Li, Yao-Jen Lee, Takuya Ozaki, Seiji Samukawa; Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam. J. Vac. Sci. Technol. A 1 March 2019; 37 (2): 021003. https://doi.org/10.1116/1.5079692
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