Low resistivity (∼100 μΩ cm) titanium nitride (TiN) films were obtained by plasma enhanced atomic layer deposition using tetrakis(dimethylamido)titanium and a nitrogen/argon plasma mixture. The impact of process parameters on film crystallinity, oxygen contamination, and electrical resistivity was studied systematically. A low background pressure during the plasma half-cycle was critical for obtaining low resistivity. The low resistivity films were highly crystalline, having (001) oriented columnar grains. Oxygen and carbon content was about 3% and 2%, respectively. The role of argon plasma in film properties is discussed. Plasma damage to thin dielectric films beneath the TiN layer was minimized by the low-pressure process. The authors suggest that electron scattering at grain boundaries is the dominant mechanism which determines the resistivity of the TiN films, thus obtaining large columnar grains is the key to obtaining low film resistivity.
Skip Nav Destination
Article navigation
September 2018
Research Article|
July 23 2018
Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Igor Krylov;
Igor Krylov
a)
1
Department of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
Ekaterina Zoubenko;
Ekaterina Zoubenko
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
Kamira Weinfeld;
Kamira Weinfeld
3
Solid State Institute, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
Yaron Kauffmann;
Yaron Kauffmann
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
Xianbin Xu;
Xianbin Xu
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
Dan Ritter;
Dan Ritter
1
Department of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
Moshe Eizenberg
Moshe Eizenberg
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
Search for other works by this author on:
a)
Electronic mail: krylov@technion.ac.il
J. Vac. Sci. Technol. A 36, 051505 (2018)
Article history
Received:
April 15 2018
Accepted:
July 02 2018
Citation
Igor Krylov, Ekaterina Zoubenko, Kamira Weinfeld, Yaron Kauffmann, Xianbin Xu, Dan Ritter, Moshe Eizenberg; Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor. J. Vac. Sci. Technol. A 1 September 2018; 36 (5): 051505. https://doi.org/10.1116/1.5035422
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study
Romel Hidayat, Khabib Khumaini, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Related Content
Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water
J. Vac. Sci. Technol. A (April 2014)
Surface spectroscopic studies of the deposition of TiN thin films from tetrakis‐(dimethylamido)‐titanium and ammonia
J. Vac. Sci. Technol. A (May 1995)
Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
J. Vac. Sci. Technol. A (December 2016)
Atomic layer deposition of Ti O 2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H 2 O
J. Appl. Phys. (October 2007)
Ultrasmooth cobalt films on SiO2 by chemical vapor deposition using a nucleation promoter and a growth inhibitor
J. Vac. Sci. Technol. A (March 2021)