Low resistivity (∼100 μΩ cm) titanium nitride (TiN) films were obtained by plasma enhanced atomic layer deposition using tetrakis(dimethylamido)titanium and a nitrogen/argon plasma mixture. The impact of process parameters on film crystallinity, oxygen contamination, and electrical resistivity was studied systematically. A low background pressure during the plasma half-cycle was critical for obtaining low resistivity. The low resistivity films were highly crystalline, having (001) oriented columnar grains. Oxygen and carbon content was about 3% and 2%, respectively. The role of argon plasma in film properties is discussed. Plasma damage to thin dielectric films beneath the TiN layer was minimized by the low-pressure process. The authors suggest that electron scattering at grain boundaries is the dominant mechanism which determines the resistivity of the TiN films, thus obtaining large columnar grains is the key to obtaining low film resistivity.
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September 2018
Research Article|
July 23 2018
Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Igor Krylov;
Igor Krylov
a)
1
Department of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Ekaterina Zoubenko;
Ekaterina Zoubenko
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Kamira Weinfeld;
Kamira Weinfeld
3
Solid State Institute, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Yaron Kauffmann;
Yaron Kauffmann
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Xianbin Xu;
Xianbin Xu
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Dan Ritter;
Dan Ritter
1
Department of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Moshe Eizenberg
Moshe Eizenberg
2
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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a)
Electronic mail: krylov@technion.ac.il
J. Vac. Sci. Technol. A 36, 051505 (2018)
Article history
Received:
April 15 2018
Accepted:
July 02 2018
Citation
Igor Krylov, Ekaterina Zoubenko, Kamira Weinfeld, Yaron Kauffmann, Xianbin Xu, Dan Ritter, Moshe Eizenberg; Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor. J. Vac. Sci. Technol. A 1 September 2018; 36 (5): 051505. https://doi.org/10.1116/1.5035422
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