Maghemite thin films prepared using atmospheric-pressure plasma annealing Available to Purchase

This study reports the preparation of maghemite (γ-Fe₂O₃) thin films, using atmospheric-pressure plasma annealed with axial N₂ (purity = 99.9%) for 3–25 min. The obtained γ-Fe₂O₃ thin film had three broad Raman active modes at 350, 500, and 700 cm⁻¹. The surface had an irregular, rough, and faceted morphology when the γ-Fe₂O₃ phase was formed. Direct and indirect optical bandgaps of the γ-Fe₂O₃ thin film were 2.22–2.30 and 1.32–1.57 eV, respectively, and the resistivity was 4.6–369.9 Ω cm, significantly lower than previously reported. The thin-film carrier concentrations were from 9.13 × 10¹⁴ to 2.83 × 10¹⁹ cm⁻³. Thus, atmospheric-pressure plasma annealing offers an effective shortened annealing time to prepare γ-Fe₂O₃ thin films.