In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In + Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.
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Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
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July 2018
Research Article|
February 14 2018
Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
Andrea Illiberi;
Andrea Illiberi
a)
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Ilias Katsouras;
Ilias Katsouras
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Sasa Gazibegovic;
Sasa Gazibegovic
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Brian Cobb;
Brian Cobb
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Elida Nekovic;
Elida Nekovic
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Willem van Boekel;
Willem van Boekel
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Corne Frijters;
Corne Frijters
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Joris Maas;
Joris Maas
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Fred Roozeboom;
Fred Roozeboom
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
and Department of Applied Physics, Eindhoven University of Technology
, 5600 MB Eindhoven, The Netherlands
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Yves Creyghton;
Yves Creyghton
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Paul Poodt;
Paul Poodt
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
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Gerwin Gelinck
Gerwin Gelinck
b)
Holst Centre/TNO
, High Tech Campus 31, 5600 AE Eindhoven, The Netherlands
and Department of Applied Physics, Eindhoven University of Technology
, 5600 MB Eindhoven, The Netherlands
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a)
Present address: ASM Belgium, Kapeldreef 75, 3001 Heverlee, Belgium.
b)
Electronic mail: gerwin.gelinck@tno.nl
J. Vac. Sci. Technol. A 36, 04F401 (2018)
Article history
Received:
October 06 2017
Accepted:
January 09 2018
Citation
Andrea Illiberi, Ilias Katsouras, Sasa Gazibegovic, Brian Cobb, Elida Nekovic, Willem van Boekel, Corne Frijters, Joris Maas, Fred Roozeboom, Yves Creyghton, Paul Poodt, Gerwin Gelinck; Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors. J. Vac. Sci. Technol. A 1 July 2018; 36 (4): 04F401. https://doi.org/10.1116/1.5008464
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