In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In + Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.
Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
Andrea Illiberi, Ilias Katsouras, Sasa Gazibegovic, Brian Cobb, Elida Nekovic, Willem van Boekel, Corne Frijters, Joris Maas, Fred Roozeboom, Yves Creyghton, Paul Poodt, Gerwin Gelinck; Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors. J. Vac. Sci. Technol. A 1 July 2018; 36 (4): 04F401. https://doi.org/10.1116/1.5008464
Download citation file: