The thermal decomposition of SiC wafers has proven to be a reliable method to obtain epitaxial graphene. However, the sublimation of Si induced by annealing of SiC substrates is notoriously difficult to control. To tackle the problem, the authors developed a fairly simple apparatus for the growth of micrometer-scale homogeneous single- and bilayer graphene in Ar atmosphere. The device is a furnace based on a considerably improved version of a directly heated element, and can achieve the desired sample quality reproducibly and efficiently. The authors characterize the samples prepared using this device by atomic force microscopy, low energy electron diffraction, Raman spectroscopy, scanning tunneling microscopy, x-ray photoemission spectroscopy, and near-edge x-ray absorption spectroscopy.
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Simple device for the growth of micrometer-sized monocrystalline single-layer graphene on SiC(0001)
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Research Article|
April 25 2018
Simple device for the growth of micrometer-sized monocrystalline single-layer graphene on SiC(0001)
Jesús Redondo;
Jesús Redondo
Institute of Physics of the Czech Academy of Sciences
, Cukrovarnicka 10, 162 00 Prague, Czech Republic
and Faculty of Mathematics and Physics, Charles University
, V Holešovičkách 2, 180 00 Prague, Czech Republic
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Mykola Telychko;
Mykola Telychko
Institute of Physics of the Czech Academy of Sciences
, Cukrovarnicka 10, 162 00 Prague, Czech Republic
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Pavel Procházka;
Pavel Procházka
Central European Institute of Technology, Brno University of Technology
, Purkyňova 123, 612 00 Brno, Czech Republic
and Institute of Physical Engineering, Brno University of Technology
, Technická 2, 616 69 Brno, Czech Republic
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Martin Konečný;
Martin Konečný
Central European Institute of Technology, Brno University of Technology
, Purkyňova 123, 612 00 Brno, Czech Republic
and Institute of Physical Engineering, Brno University of Technology
, Technická 2, 616 69 Brno, Czech Republic
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Jan Berger;
Jan Berger
Institute of Physics of the Czech Academy of Sciences
, Cukrovarnicka 10, 162 00 Prague, Czech Republic
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Martin Vondráček;
Martin Vondráček
Institute of Physics of the Czech Academy of Sciences
, Na Slovance 2, 182 21 Prague, Czech Republic
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Jan Čechal;
Jan Čechal
Central European Institute of Technology, Brno University of Technology
, Purkyňova 123, 612 00 Brno, Czech Republic and
Institute of Physical Engineering, Brno University of Technology
, Technická 2, 616 69 Brno, Czech Republic
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Pavel Jelínek;
Pavel Jelínek
Institute of Physics of the Czech Academy of Sciences
, Cukrovarnicka 10, 162 00 Prague, Czech Republic
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Martin Švec
Martin Švec
a)
Institute of Physics of the Czech Academy of Sciences
, Cukrovarnicka 10, 162 00 Prague, Czech Republic
a)Author to whom correspondence should be addressed; electronic mail: svec@fzu.cz
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a)Author to whom correspondence should be addressed; electronic mail: svec@fzu.cz
J. Vac. Sci. Technol. A 36, 031401 (2018)
Article history
Received:
October 11 2017
Accepted:
April 11 2018
Citation
Jesús Redondo, Mykola Telychko, Pavel Procházka, Martin Konečný, Jan Berger, Martin Vondráček, Jan Čechal, Pavel Jelínek, Martin Švec; Simple device for the growth of micrometer-sized monocrystalline single-layer graphene on SiC(0001). J. Vac. Sci. Technol. A 1 May 2018; 36 (3): 031401. https://doi.org/10.1116/1.5008977
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