Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5–4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
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March 2018
Research Article|
March 02 2018
Amorphous gallium oxide grown by low-temperature PECVD
Eiji Kobayashi;
Eiji Kobayashi
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
; Choshu Industry Co., Ltd.
, 3740, Shin-yamanoi, Sanyo Onoda, Yamaguchi 757-8511, Japan
; and Department of Materials Science and Engineering, Yamaguchi University
, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mathieu Boccard;
Mathieu Boccard
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
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Quentin Jeangros;
Quentin Jeangros
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
and Department of Physics, University of Basel
, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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Nathan Rodkey;
Nathan Rodkey
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
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Daniel Vresilovic;
Daniel Vresilovic
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
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Aïcha Hessler-Wyser;
Aïcha Hessler-Wyser
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
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Max Döbeli;
Max Döbeli
ETH Zurich, Ion Beam Physics
, Otto-Stern-Weg 5, Zurich 8093, Switzerland
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Daniel Franta;
Daniel Franta
Department of Physical Electronics, Faculty of Science, Masaryk University
, Kotlářská, 2, Brno 61137, Czechia
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Stefaan De Wolf;
Stefaan De Wolf
KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Saudi Arabia
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Monica Morales-Masis;
Monica Morales-Masis
a)
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
a)Electronic mail: monica.moralesmasis@epfl.ch
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Christophe Ballif
Christophe Ballif
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b
, CH-2002 Neuchâtel, Switzerland
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a)Electronic mail: monica.moralesmasis@epfl.ch
J. Vac. Sci. Technol. A 36, 021518 (2018)
Article history
Received:
December 09 2017
Accepted:
February 12 2018
Citation
Eiji Kobayashi, Mathieu Boccard, Quentin Jeangros, Nathan Rodkey, Daniel Vresilovic, Aïcha Hessler-Wyser, Max Döbeli, Daniel Franta, Stefaan De Wolf, Monica Morales-Masis, Christophe Ballif; Amorphous gallium oxide grown by low-temperature PECVD. J. Vac. Sci. Technol. A 1 March 2018; 36 (2): 021518. https://doi.org/10.1116/1.5018800
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