(001)-oriented LaAlO3 films were grown epitaxially on (001) Si substrates utilizing an ultrathin 5 unit-cell-thick SrTiO3 buffer layer. The SrTiO3 layer was grown at ∼250 °C and annealed in vacuum at 550 °C, following an epitaxy-by-periodic-annealing procedure. Upon this buffer layer, the LaAlO3 layer was then grown by codeposition at 580 °C. The rocking curve of the as-grown LaAlO3 film exhibits a full width at half maximum value as small as 0.02°. Atomic force microscopy shows that the surface of the LaAlO3 film has a root-mean-square roughness of 1.3 Å. Scanning transmission electron microscopy reveals that the LaAlO3/SrTiO3 interface and the SrTiO3/Si interfaces are sharp. This high crystalline quality, twin-free, epitaxial LaAlO3 on SrTiO3 on silicon could be relevant to integrating oxides with multiple functionalities on silicon.
References
1.
S.
Geller
and V. B.
Bala
, Acta Crystallogr.
9
, 1019
(1956
).2.
K. J.
Hubbard
and D. G.
Schlom
, J. Mater. Res.
11
, 2757
(1996
).3.
D. G.
Schlom
and J. H.
Haeni
, MRS Bull.
27
, 198
(2002
).4.
R. W.
Simon
, C. E.
Platt
, A. E.
Lee
, G. S.
Lee
, K. P.
Daly
, M. S.
Wire
, J. A.
Luine
, and M.
Urbanik
, Appl. Phys. Lett.
53
, 2677
(1988
).5.
R. A.
Rao
, Q.
Gan
, C. B.
Eom
, R. J.
Cava
, Y.
Suzuki
, J. J.
Krajewski
, S. C.
Gausepohl
, and M.
Lee
, Appl. Phys. Lett.
70
, 3035
(1997
).6.
S. G.
Ghonge
, E.
Goo
, R.
Ramesh
, T.
Sands
, and V. G.
Keramidas
, Appl. Phys. Lett.
63
, 1628
(1993
).7.
K. M.
Satyalakshmi
, R. M.
Mallya
, K. V.
Ramanathan
, X. D.
Wu
, B.
Brainard
, D. C.
Gautier
, N. Y.
Vasanthacharya
, and M. S.
Hegde
, Appl. Phys. Lett.
62
, 1233
(1993
).8.
R. J.
Zeches
et al., Science
326
, 977
(2009
).9.
S.
Jin
, T. H.
Tiefel
, M.
McCormack
, R. A.
Fastnacht
, R.
Ramesh
, and L. H.
Chen
, Science
264
, 413
(1994
).10.
M. A.
Novojilov
, O. Yu.
Gorbenko
, I. E.
Graboy
, A. R.
Kaul
, H. W.
Zandbergen
, N. A.
Babushkina
, and L. M.
Belova
, Appl. Phys. Lett.
76
, 2041
(2000
).11.
M.
Kamei
, T.
Miyagi
, and T.
Ishigaki
, Chem. Phys. Lett.
407
, 209
(2005
).12.
A. T.
Findikoglu
, Q. X.
Jia
, X. D.
Wu
, G. J.
Chen
, T.
Venkatesan
, and D. W.
Reagor
, Appl. Phys. Lett.
68
, 1651
(1996
).13.
L. A.
Knauss
, J. M.
Pond
, J. S.
Horwitz
, D. B.
Chrisey
, C. H.
Mueller
, and R.
Treece
, Appl. Phys. Lett.
69
, 25
(1996
).14.
K. S.
Takahashi
, M.
Kawasaki
, and Y.
Tokura
, Appl. Phys. Lett.
79
, 1324
(2001
).15.
G.
Malandrino
, A.
Frassica
, and I. L.
Fragalà
, Chem. Vap. Deposition
3
, 306
(1997
).16.
X. B.
Lu
, Z. G.
Liu
, X.
Zhang
, R.
Huang
, H. W.
Zhou
, X. P.
Wang
, and B.-Y.
Nguyen
, J. Phys. D: Appl. Phys.
36
, 3047
(2003
).17.
E.
Sader
, H.
Schmidt
, K.
Hradil
, and W.
Wersing
, Supercond. Sci. Technol.
4
, 371
(1991
).18.
K.
Kukli
et al., Chem. Vap. Deposition
12
, 158
(2006
).19.
O. K.
Dmitri
, D. G.
Schlom
, H.
Li
, and S.
Stemmer
, Jpn. J. Appl. Phys., Part 2
44
, L617
(2005
).20.
T. L.
Chu
, M. H.
Francombe
, G. A.
Gruber
, J. J.
Oberly
, and R. L.
Tallman
, Report No. AFCRL-65-574, Westinghouse Research Laboratories, Pittsburgh, 1965
).21.
C. A.
Billman
, R. A.
McKee
, F. J.
Walker
, M. F.
Chisholm
, J.
Lettieri
, and D. G.
Schlom
, 12th International Symposium on Integrated Ferroelectrics (ISIF 2000),
Aachen, Germany
(2000
).22.
W. F.
Xiang
, H. B.
Lu
, Z. H.
Chen
, X. B.
Lu
, M.
He
, H.
Tian
, Y. L.
Zhou
, C. R.
Li
, and X. L.
Ma
, J. Cryst. Growth
271
, 165
(2004
).23.
J. W.
Reiner
, A.
Posadas
, M.
Wang
, T. P.
Ma
, and C. H.
Ahn
, Microelectron. Eng.
85
, 36
(2008
).24.
T. Q.
Ngo
, A.
Posadas
, M. D.
McDaniel
, D. A.
Ferrer
, J.
Bruley
, C.
Breslin
, A. A.
Demkov
, and J. G.
Ekerdt
, J. Cryst. Growth
363
, 150
(2013
).25.
C. G.
Bischak
, C. L.
Hetherington
, Z.
Wang
, J. T.
Precht
, D. M.
Kaz
, D. G.
Schlom
, and N. S.
Ginsberg
, Nano Lett.
15
, 3383
(2015
).26.
C. D.
Theis
and D. G.
Schlom
, J. Vac. Sci. Technol., A
14
, 2677
(1996
).27.
J.
Lettieri
, J. H.
Haeni
, and D. G.
Schlom
, J. Vac. Sci. Technol., A
20
, 1332
(2002
).28.
H.
Li
et al., J. Appl. Phys.
93
, 4521
(2003
).29.
M. P.
Warusawithana
et al., Science
324
, 367
(2009
).30.
Z.
Wang
et al., “Enhancement of crystalline quality of SrTiO3 on silicon,” APL Mater. (submitted).31.
M. P.
Warusawithana
et al., Nat. Commun.
4
, 2351
(2013
).32.
S.-H.
Baek
and C. B.
Eom
, Acta Mater.
61
, 2734
(2013
).33.
W.-F.
Xiang
, H.-B.
Lu
, Z.-H.
Chen
, M.
He
, and Y.-L.
Zhou
, Chin. Phys. Lett.
22
, 1515
(2005
).34.
C. S.
Hellberg
, K. E.
Andersen
, H.
Li
, P. J.
Ryan
, and J. C.
Woicik
, Phys. Rev. Lett.
108
, 166101
(2012
).35.
L. F.
Kourkoutis
, C. S.
Hellberg
, V.
Vaithyanathan
, H.
Li
, M. K.
Parker
, K. E.
Anderson
, D. G.
Schlom
, and D. A.
Muller
, Phys. Rev. Lett.
100
, 049901
(2008
).36.
H.
Kiessig
, Ann. Phys.
402
, 769
(1931
).37.
J.
Lettieri
, Critical Issues of Complex, Epitaxial Oxide Growth and Integration with Silicon by Molecular Beam Epitaxy
(Pennsylvania State University
, University Park
, 2002
), p. 106
.38.
M.
Nieminen
, T.
Sajavaara
, E.
Rauhala
, M.
Putkonen
, and L.
Niinistö
, J. Mater. Chem.
11
, 2340
(2001
).39.
M. A.
Carpenter
, T. W.
Darling
, J. D.
Bass
, D. L.
Lakshtanov
, S. V.
Sinogeikin
, and S. D.
Jacobsen
, American Geophysical Union Fall Meeting
(2006
).40.
J. B.
Nelson
and D. P.
Riley
, Proc. Phys. Soc.
57
, 160
(1945
).41.
Y. S.
Touloukian
, R.
Kirby
, E.
Taylor
, and T.
Lee
, Thermal Expansion: Nonmetallic Solids, Volume 13 of Thermophysical Properties of Matter
(Plenum
, New York
, 1977
), p. 154
.42.
B. C.
Chakoumakos
, D. G.
Schlom
, M.
Urbanik
, and J.
Luine
, J. Appl. Phys.
83
, 1979
(1998
).43.
L.
Zhang
and R.
Engel-Herbert
, Phys. Status Solidi RRL
8
, 917
(2014
).© 2017 Author(s).
2017
Author(s)
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