Zirconia thin films with varying yttria concentrations (0, 4, and 10 mol. %) were grown on Si (111) substrates using electron beam physical vapor deposition technique. The residual stress as a function of depth on undoped and yttria doped zirconia films with different phases was determined using the modified sin2ψ technique by varying the x-ray angle of incidence. Surface profilometry was also used as a complementary technique for qualitative measurement of stress in these films. The residual stress profile revealed that tensile residual stress was present in the near-surface region and it decreased rapidly as a function of depth in all three films with different yttria concentration. The possible reasons for the film growth stress and stress gradient in the yttria doped zirconia films with different concentration of yttria are discussed.
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