Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 °C and between 125 and 200 °C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100–250 °C was 0.05–0.18 Å/cycle, and with the ozone process, the growth rate at 80–200 °C was 0.05–0.11 Å/cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO2 nanostructure functioned also as a test structure for conformality of the processes.
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July 2017
Research Article|
May 30 2017
Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water
Jere Tupala;
Jere Tupala
a)
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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Marianna Kemell;
Marianna Kemell
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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Miika Mattinen;
Miika Mattinen
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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Kristoffer Meinander;
Kristoffer Meinander
Division of Materials Physics, Department of Physics,
University of Helsinki
, P.O. Box 43, FI-00014, Helsinki, Finland
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Sanni Seppälä;
Sanni Seppälä
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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Timo Hatanpää;
Timo Hatanpää
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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Jyrki Räisänen;
Jyrki Räisänen
Division of Materials Physics, Department of Physics,
University of Helsinki
, P.O. Box 43, FI-00014, Helsinki, Finland
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Mikko Ritala;
Mikko Ritala
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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Markku Leskelä
Markku Leskelä
Department of Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014, Helsinki, Finland
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a)
Electronic mail: jere.tupala@helsinki.fi
J. Vac. Sci. Technol. A 35, 041506 (2017)
Article history
Received:
March 22 2017
Accepted:
May 16 2017
Citation
Jere Tupala, Marianna Kemell, Miika Mattinen, Kristoffer Meinander, Sanni Seppälä, Timo Hatanpää, Jyrki Räisänen, Mikko Ritala, Markku Leskelä; Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water. J. Vac. Sci. Technol. A 1 July 2017; 35 (4): 041506. https://doi.org/10.1116/1.4984279
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