The catalyst free growth of a large density of highly oriented ZnO nanopillars on c-GaN/sapphire templates has been demonstrated through a chemical vapor deposition route. The pillars are found to have a narrow distribution of height and diameter. It has been observed that the morphology of the growth can be varied from entirely continuous epitaxial layer to oriented nanopillars by controlling the growth temperature and growth duration. These parameters can also be adjusted to control the average diameter and height of these pillars. The authors attribute the formation of nanopillars to a two dimension to three dimension transition of the growth mode as a result of an abrupt change of Zn to oxygen flux ratio upon the closure of oxygen flow into the reactor at the end of the growth.
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July 2017
Research Article|
May 10 2017
Catalyst free growth of highly crystalline ZnO nanopillars on c-GaN/sapphire templates by chemical vapor deposition technique
Rajendra K. Saroj;
Rajendra K. Saroj
Department of Physics,
Indian Institute of Technology
, Bombay, Mumbai 400076, India
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Barun K. Barick;
Barun K. Barick
Department of Physics,
Indian Institute of Technology
, Bombay, Mumbai 400076, India
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Shubhabrata Dhar
Shubhabrata Dhar
a)
Department of Physics,
Indian Institute of Technology
, Bombay, Mumbai 400076, India
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a)
Electronic mail: dhar@phy.iitb.ac.in
J. Vac. Sci. Technol. A 35, 041501 (2017)
Article history
Received:
January 25 2017
Accepted:
April 26 2017
Citation
Rajendra K. Saroj, Barun K. Barick, Shubhabrata Dhar; Catalyst free growth of highly crystalline ZnO nanopillars on c-GaN/sapphire templates by chemical vapor deposition technique. J. Vac. Sci. Technol. A 1 July 2017; 35 (4): 041501. https://doi.org/10.1116/1.4983209
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