Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO2 as the UV-absorbing host material and investigated the energy transfer between TiO2 and 11 different lanthanide ions, Ln3+ (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO2 to Yb3+ with a second Ln3+, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd)3/O3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl4/H2O precursor pairs. The focus of the work is to explore the energy transfer from TiO2 to Ln3+ ions, and the energy transfer between Ln3+ and Yb3+ ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO2 to Ln3+ in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln2Ti2O7. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger lanthanides. Energy transfer from Ln3+ to Yb3+ was observed neither in the amorphous or annealed samples. On the other hand, Yb3+ was found to be an efficient sensitizer for Ho3+'s 1200 nm emission.
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January 2016
Research Article|
November 25 2015
Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition
Per-Anders Hansen;
Per-Anders Hansen
a)
Department of Chemistry, Centre for Materials Science and Nanotechnology,
University of Oslo
, Sem Sælandsvei 26, 0371 Oslo, Norway
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Helmer Fjellvåg;
Helmer Fjellvåg
Department of Chemistry, Centre for Materials Science and Nanotechnology,
University of Oslo
, Sem Sælandsvei 26, 0371 Oslo, Norway
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Terje G. Finstad;
Terje G. Finstad
Department of Physics, Centre for Materials Science and Nanotechnology,
University of Oslo
, Sem Sælandsvei 24, 0371 Oslo, Norway
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Ola Nilsen
Ola Nilsen
Department of Chemistry, Centre for Materials Science and Nanotechnology,
University of Oslo
, Sem Sælandsvei 26, 0371 Oslo, Norway
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a)
Electronic mail: p.a.hansen@kjemi.uio.no
J. Vac. Sci. Technol. A 34, 01A130 (2016)
Article history
Received:
September 04 2015
Accepted:
November 12 2015
Citation
Per-Anders Hansen, Helmer Fjellvåg, Terje G. Finstad, Ola Nilsen; Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition. J. Vac. Sci. Technol. A 1 January 2016; 34 (1): 01A130. https://doi.org/10.1116/1.4936389
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