A major class of resistive memory devices is based on transition metal oxides, where mobile oxygen vacancies allow these devices to exhibit multiple resistance states. Ta2O5 based devices in particular have recently demonstrated impressive endurance and forming-free results. Deposition of substoichiometric Ta2Ox (x < 5) films is a critical process in order to produce the required oxygen vacancies in these devices. This paper describes a physical vapor deposition (PVD) reactive sputtering process to deposit substoichiometric Ta2Ox films. The desired film stoichiometry is achieved by feedback control of the oxygen partial pressure in the PVD chamber. A calibration procedure based on Rutherford backscattering spectroscopy is described for locating the optimum oxygen partial pressure.
Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications
James E. Stevens, Andrew J. Lohn, Seth A. Decker, Barney L. Doyle, Patrick R. Mickel, Matthew J. Marinella; Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications. J. Vac. Sci. Technol. A 1 March 2014; 32 (2): 021501. https://doi.org/10.1116/1.4828701
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