The continued research and development effort on silicon ultrashallow junctions has posed a great challenge to materials characterization, due to the need for depth profiling of dopants and silicon lattice defects with a subnanometer resolution. In this work, we report on a method combining ion beam analysis (Rutherford backscattering, ion channeling, and nuclear reaction analysis) with room-temperature UV-assisted oxidation and chemical wet etching for obtaining high-resolution (∼0.5 nm) depth distributions of total boron atoms, electrically activated boron atoms and silicon lattice defects in silicon ultrashallow junctions. The application of this method was demonstrated by profiling silicon junctions as shallow as 8 nm, created by 200-eV boron ion implantation followed annealing by various techniques. The capability to profile boron at such high resolution has resulted in observation of boron segregation. Additionally, the ability for depth profiling Si lattice defects offered by this method has aided in the understanding of thermal and laser annealing effects on defect formation in Si junctions. Our experimental results are compared with those obtained using other techniques such as secondary ion mass spectroscopy and four-point probe, and differences are discussed in detail.
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March 11 2013
Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques Available to Purchase
Lakshmanan H. Vanamurthy;
Lakshmanan H. Vanamurthy
College of Nanoscale Science and Engineering,
University at Albany-State University of New York
, Albany, New York 12203
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Mengbing Huang;
Mengbing Huang
a)
College of Nanoscale Science and Engineering,
University at Albany-State University of New York
, Albany, New York 12203
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Hassaram Bakhru;
Hassaram Bakhru
College of Nanoscale Science and Engineering,
University at Albany-State University of New York
, Albany, New York 12203
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Toshiharu Furukawa;
Toshiharu Furukawa
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
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Nathaniel Berliner;
Nathaniel Berliner
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
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Joshua Herman;
Joshua Herman
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
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Zhengmao Zhu;
Zhengmao Zhu
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
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Paul Ronsheim;
Paul Ronsheim
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
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Bruce Doris
Bruce Doris
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
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Lakshmanan H. Vanamurthy
College of Nanoscale Science and Engineering,
University at Albany-State University of New York
, Albany, New York 12203
Mengbing Huang
a)
College of Nanoscale Science and Engineering,
University at Albany-State University of New York
, Albany, New York 12203
Hassaram Bakhru
College of Nanoscale Science and Engineering,
University at Albany-State University of New York
, Albany, New York 12203
Toshiharu Furukawa
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
Nathaniel Berliner
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
Joshua Herman
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
Zhengmao Zhu
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
Paul Ronsheim
IBM Corporation
, 257 Fuller Road, Albany, New York 12203
Bruce Doris
IBM Corporation
, 257 Fuller Road, Albany, New York 12203a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. A 31, 031403 (2013)
Article history
Received:
November 26 2012
Accepted:
February 25 2013
Citation
Lakshmanan H. Vanamurthy, Mengbing Huang, Hassaram Bakhru, Toshiharu Furukawa, Nathaniel Berliner, Joshua Herman, Zhengmao Zhu, Paul Ronsheim, Bruce Doris; Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques. J. Vac. Sci. Technol. A 1 May 2013; 31 (3): 031403. https://doi.org/10.1116/1.4795208
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