Studies of chemically induced hot electron flow over Schottky barriers in catalytic planar nanostructures provide a direct insight into underlying charge transfer processes involved in chemical energy dissipation at solid surfaces. A systematic approach is described here to separate the hot electron and thermal current contributions to the total generated current based on in-situ resistive heating of cathode nanolayer of the Schottky structure. The method is applicable at high pressures in the gas phase. Analysis of the current induced by H2 oxidation to H2O on Pt/n-GaP nanostructure is performed for surface temperatures in the range of 453–513 K, and 120 Torr oxyhydrogen environment with 15 Torr H2. All the current components grow monotonously with temperature, while relative fraction of the hot electron current decreases with temperature from 85 to 52%.
Separation of hot electron current component induced by hydrogen oxidation on resistively heated Pt/n-GaP Schottky nanostructures
Mohammad A. Hashemian, Suhas K. Dasari, Eduard G. Karpov; Separation of hot electron current component induced by hydrogen oxidation on resistively heated Pt/n-GaP Schottky nanostructures. J. Vac. Sci. Technol. A 1 March 2013; 31 (2): 020603. https://doi.org/10.1116/1.4790122
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