The atomic layer deposition of gallium doped zinc oxide films is investigated as a method of fabricating transparent conducting oxide substrates for cadmium telluride based photovoltaic cells. The growth parameters and properties of gallium-doped ZnO were established for a range of dopant concentrations. 1 at. % gallium-doped films exhibited the lowest electrical sheet resistances and were selected as substrates to deposit Cd1−xZnxS/CdTe photovoltaic cells. The average current density–voltage characteristics of 16 cells under AM1.5 illumination yielded a conversion efficiency of 10.8% and a fill-factor of 65%.
Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
Paul R. Chalker, Paul A. Marshall, Simon Romani, Joseph W. Roberts, Stuart J. C. Irvine, Daniel A. Lamb, Andrew J. Clayton, Paul A. Williams; Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics. J. Vac. Sci. Technol. A 1 January 2013; 31 (1): 01A120. https://doi.org/10.1116/1.4765642
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