Conductive LaNiO3 (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 °C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 °C to (110) at 600 °C at deposition temperature of 200–600 °C. The room temperature resistivity was 2250–3400 μΩ-cm at the range of 200 °C ∼500 °C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 °C, and the resistivity value was 280 μΩ-cm at a postannealing temperature of 600 °C. Subsequently, sol–gel derived (Pb,La)(Zr,Ti)O3 thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.

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