Conductive LaNiO3 (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 °C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 °C to (110) at 600 °C at deposition temperature of 200–600 °C. The room temperature resistivity was 2250–3400 μΩ-cm at the range of 200 °C ∼500 °C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 °C, and the resistivity value was 280 μΩ-cm at a postannealing temperature of 600 °C. Subsequently, sol–gel derived (Pb,La)(Zr,Ti)O3 thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.
Microstructure and electrical properties of LaNiO3 thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O3 films on silicon and nickel substrates
Shanshan Liu, Beihai Ma, Manoj Narayanan, Sheng Tong, Rachel Koritala, Uthamalingam Balachandran; Microstructure and electrical properties of LaNiO3 thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O3 films on silicon and nickel substrates. J. Vac. Sci. Technol. A 1 November 2012; 30 (6): 061505. https://doi.org/10.1116/1.4752084
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