The authors report on the fabrication of FeS2 (pyrite) thin films by sulfurizing Fe3S4 that were deposited by direct current magnetron sputtering at room temperature. Under the selected sputtering conditions, Fe3S4 nanocrystal films are obtained and the nanocrystals tend to locally cluster and closely pack into ricelike nanoparticles with an increase in film thickness. Meanwhile, the film tends to crack when the film thickness is increased over ∼1.3 μm. The film cracking can be effectively suppressed by an introduction of a 3-nm Cu intermediate layer prior to Fe3S4 deposition. However, an introduction of a 3-nm Al intermediate layer tends to enhance the film cracking. By post-growth thermal sulfurization of the Fe3S4 thin films in a tube-furnace, FeS2 with high phase purity, as determined by using x ray diffraction, is obtained. Optical absorption spectroscopy was employed to characterize the resultant FeS2 thin films, which revealed two absorption edges at 0.9 and 1.2 eV, respectively. These two absorption edges are assigned to the direct bandgap (0.9 eV) and the indirect allowed transitions (1.2 eV) of FeS2, respectively.
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July 2012
Research Article|
April 02 2012
Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications
Hongfei Liu;
Hongfei Liu
a)
Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research)
, 3 Research Link, Singapore 117602, Singapore
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Dongzhi Chi
Dongzhi Chi
Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research)
, 3 Research Link, Singapore 117602, Singapore
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. A 30, 04D102 (2012)
Article history
Received:
January 05 2012
Accepted:
March 14 2012
Citation
Hongfei Liu, Dongzhi Chi; Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications. J. Vac. Sci. Technol. A 1 July 2012; 30 (4): 04D102. https://doi.org/10.1116/1.3699022
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