The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH3) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 °C for NH3 doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to ∼385 °C. Deposition rate, which is constant at ∼0.51 Å/cycle within the temperature range of 250 – 350 °C, increased slightly as the temperature decreased to 185 °C. In the bulk film, concentrations of Ga, N, and O were constant at ∼36.6, ∼43.9, and ∼19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.
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January 2012
Research Article|
December 01 2011
Atomic layer deposition of GaN at low temperatures
Cagla Ozgit;
Cagla Ozgit
UNAM – Institute of Materials Science and Nanotechnology,
Bilkent University
, 06800 Ankara Turkey
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Inci Donmez;
Inci Donmez
UNAM – Institute of Materials Science and Nanotechnology,
Bilkent University
, 06800 Ankara Turkey
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Mustafa Alevli;
Mustafa Alevli
UNAM – Institute of Materials Science and Nanotechnology,
Bilkent University
, 06800 Ankara Turkey
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Necmi Biyikli
Necmi Biyikli
a)
UNAM – Institute of Materials Science and Nanotechnology,
Bilkent University
, 06800 Ankara Turkey
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a)
Author to whom correspondence should be addressed; electronic mail: biyikli@unam.bilkent.edu.tr
J. Vac. Sci. Technol. A 30, 01A124 (2012)
Article history
Received:
August 15 2011
Accepted:
October 31 2011
Citation
Cagla Ozgit, Inci Donmez, Mustafa Alevli, Necmi Biyikli; Atomic layer deposition of GaN at low temperatures. J. Vac. Sci. Technol. A 1 January 2012; 30 (1): 01A124. https://doi.org/10.1116/1.3664102
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