Lithium silicate thin films, which are interesting materials for example in lithium ion batteries, were grown by the atomic layer deposition technique from lithium hexamethyldisilazide [LiHMDS, Li(N(SiMe3)2)] and ozone precursors. Films were obtained at a wide deposition temperature range between 150 and 400 °C. All the films were amorphous except at 400 °C, where partial decomposition of LiHMDS was also observed. The growth behavior was examined in detail at 250 °C, and saturation of growth rates and refractive indices with precursor doses was confirmed, thereby verifying self-limiting surface reactions. Likewise, the linear thickness dependence of the films with the number of deposition cycles was verified. Strong dependence of growth rate and film composition on deposition temperature was also seen. Overall, the amorphous films grown at 250 °C had a stoichiometry close to lithium metasilicate (Li2.0SiO2.9) with 0.7 at. % carbon and 4.6 at. % hydrogen impurities. The corresponding growth rate and refractive index (n580) were 0.8 Å/cycle and about 1.55.
Study of amorphous lithium silicate thin films grown by atomic layer deposition
Jani Hämäläinen, Frans Munnik, Timo Hatanpää, Jani Holopainen, Mikko Ritala, Markku Leskelä; Study of amorphous lithium silicate thin films grown by atomic layer deposition. J. Vac. Sci. Technol. A 1 January 2012; 30 (1): 01A106. https://doi.org/10.1116/1.3643349
Download citation file: