Lithium silicate thin films, which are interesting materials for example in lithium ion batteries, were grown by the atomic layer deposition technique from lithium hexamethyldisilazide [LiHMDS, Li(N(SiMe3)2)] and ozone precursors. Films were obtained at a wide deposition temperature range between 150 and 400 °C. All the films were amorphous except at 400 °C, where partial decomposition of LiHMDS was also observed. The growth behavior was examined in detail at 250 °C, and saturation of growth rates and refractive indices with precursor doses was confirmed, thereby verifying self-limiting surface reactions. Likewise, the linear thickness dependence of the films with the number of deposition cycles was verified. Strong dependence of growth rate and film composition on deposition temperature was also seen. Overall, the amorphous films grown at 250 °C had a stoichiometry close to lithium metasilicate (Li2.0SiO2.9) with 0.7 at. % carbon and 4.6 at. % hydrogen impurities. The corresponding growth rate and refractive index (n580) were 0.8 Å/cycle and about 1.55.
Skip Nav Destination
Article navigation
January 2012
Research Article|
September 27 2011
Study of amorphous lithium silicate thin films grown by atomic layer deposition
Jani Hämäläinen;
Jani Hämäläinen
a)
Laboratory of Inorganic Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
Search for other works by this author on:
Frans Munnik;
Frans Munnik
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden–Rossendorf
, P.O. Box 510119, D-01314 Dresden, Germany
Search for other works by this author on:
Timo Hatanpää;
Timo Hatanpää
Laboratory of Inorganic Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
Search for other works by this author on:
Jani Holopainen;
Jani Holopainen
Laboratory of Inorganic Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
Search for other works by this author on:
Mikko Ritala;
Mikko Ritala
Laboratory of Inorganic Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
Search for other works by this author on:
Markku Leskelä
Markku Leskelä
Laboratory of Inorganic Chemistry,
University of Helsinki
, P.O. Box 55, FI-00014 Helsinki, Finland
Search for other works by this author on:
a)
Author to whom correspondence should be addressed; electronic mail: jani.hamalainen@helsinki.fi
J. Vac. Sci. Technol. A 30, 01A106 (2012)
Article history
Received:
July 08 2011
Accepted:
August 30 2011
Citation
Jani Hämäläinen, Frans Munnik, Timo Hatanpää, Jani Holopainen, Mikko Ritala, Markku Leskelä; Study of amorphous lithium silicate thin films grown by atomic layer deposition. J. Vac. Sci. Technol. A 1 January 2012; 30 (1): 01A106. https://doi.org/10.1116/1.3643349
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Surface chemistry of group 11 atomic layer deposition precursors on silica using solid-state nuclear magnetic resonance spectroscopy
J. Chem. Phys. (November 2016)
Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li2Si2O5 to lithium-rich Li8SiO6
Journal of Vacuum Science & Technology A (October 2017)
Potential gold(I) precursors evaluated for atomic layer deposition
Journal of Vacuum Science & Technology A (November 2016)
LiF by atomic layer deposition—Made easy
Journal of Vacuum Science & Technology A (August 2020)
Fast and reliable ab initio calculation of crystal field splittings in lanthanide complexes
J. Chem. Phys. (October 2017)