The electrical properties of transparent polycrystalline monoclinic HfO2 dielectrics prepared by plasma assisted pulsed laser deposition were studied. The capacitance-voltage and leakage current-voltage characteristics of the capacitors incorporating HfO2 dielectrics were examined in terms of the structural, optical properties of the HfO2 layers. The interfacial properties between the HfO2 layer and the Si substrate were also examined. The HfO2 layers showed excellent thermal stability both in the HfO2 structure and in the HfO2/Si interface. The capacitance-voltage characteristics showed improvements through thermal annealing with a slight increase of leakage current. With an equivalent oxide thickness of 4.7 nm, the 700 °C annealed HfO2 dielectrics had a dielectric constant of 16.5 and leakage current densities of 9.8 × 10−8 and 9.2 × 10−7 A/cm2 at dielectric fields of +0.75 and −0.75 MV/cm, respectively.
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January 2012
Research Article|
December 28 2011
Transparent polycrystalline monoclinic HfO2 dielectrics prepared by plasma assisted pulsed laser deposition
Zhifeng Ying;
Zhifeng Ying
Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering,
Fudan University
, Shanghai 200433, China
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Jian Sun;
Jian Sun
Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering,
Fudan University
, Shanghai 200433, China
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Zhigao Hu;
Zhigao Hu
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University
, Shanghai 200241, China
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Wenlei Yu;
Wenlei Yu
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University
, Shanghai 200241, China
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Ning Xu;
Ning Xu
Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education; Department of Optical Science and Engineering,
Fudan University
, Shanghai 200433, China
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a)
Author to whom correspondence should be addressed; electronic mail: jdwu@fudan.edu.cn
J. Vac. Sci. Technol. A 30, 011506 (2012)
Article history
Received:
June 04 2011
Accepted:
October 17 2011
Citation
Zhifeng Ying, Jian Sun, Zhigao Hu, Wenlei Yu, Ning Xu, Jiada Wu; Transparent polycrystalline monoclinic HfO2 dielectrics prepared by plasma assisted pulsed laser deposition. J. Vac. Sci. Technol. A 1 January 2012; 30 (1): 011506. https://doi.org/10.1116/1.3673783
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