The authors investigate capacitance-voltage characteristics of HfO2/VOx/HfO2/n-Si metal-oxide semiconductor devices that include vanadium oxide (VOx) films of different composition. Temperature dependent capacitance-voltage measurements are reported spanning the metal-insulator transition boundary of VOx films. The measured trends in dielectric properties are cross-correlated with resistance ratio change and oxidation state in identical films. The results could be of relevance to advancing synthesis of correlated oxide films on dielectric layers and further utilizing capacitance spectroscopy as a way to probe oxide stoichiometry in gated heterostructures.

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