Epitaxial layers of ZnxCd1−xTe have been grown on InSb, CdTe, and HgCdTe substrates by the technique of molecular beam epitaxy (MBE). Composition has been varied over the range 0≤x≤0.9 by adjusting the temperatures of furnaces containing elemental Zn and polycrystalline CdTe. Oscillation and Weissenberg x‐ray patterns indicate that layers are single phase and single crystal for low values of misfit between layer and substrate. Near band‐edge emission is dominant in the photoluminescence spectrum of layers grown at substrate temperatures near 200 °C.
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Research Article| May 01 1985
Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy
J. H. Dinan;
J. H. Dinan, S. B. Qadri; Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy. J. Vac. Sci. Technol. A 1 May 1985; 3 (3): 851–854. https://doi.org/10.1116/1.573329
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