MOCVD growth of CdTe and HgCdTe

This paper summarizes the status of MOCVD (metal–organic chemical vapor deposition) growth of CdTe and HgCdTe at several laboratories. The data are from publications and from the results of a questionnaire sent to approximately 34 laboratories. The growth of single‐crystal HgTe, CdTe, and HgCdTe has been reported. CdTe is grown between 306 and 500 °C having hole concentrations approaching 10¹⁵ cm⁻³. HgCdTe is grown between 400 and 430 °C having electron concentrations as low as 4×10¹⁵ cm⁻³. RSRE (Royal Signals and Radar Establishment), Honeywell , Raytheon, and Rensselaer Polytechnic are using MOCVD for growth of CdTe and HgCdTe; two other organizations report that their work in this area is proprietary, and four organizations report plans to begin MOCVD growth soon. This paper has three sections covering (1) results of a worldwide survey, (2) published results (Cal Tech, RSRE, Raytheon, and Rensselaer), and (3) results of the Honeywell effort.