LPE growth conditions for Cd1−xMnxTe and Hg1−xMnxTe epitaxial layers

Becla, P.; Wolff, P. A.; Aggarwal, R. L.; Yuen, S. Y.

doi:10.1116/1.573180

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Research Article| January 01 1985

LPE growth conditions for Cd_1−xMn_xTe and Hg_1−xMn_xTe epitaxial layers

P. Becla;

P. Becla

Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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P. A. Wolff;

P. A. Wolff

Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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R. L. Aggarwal;

R. L. Aggarwal

Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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S. Y. Yuen

Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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J. Vac. Sci. Technol. A 3, 116–118 (1985)

https://doi.org/10.1116/1.573180

An LPE tipping technique for the growth of ternary semimagnetic semiconducting CdMnTe and HgMnTe epitaxial layers from Te‐rich solution is described. Liquid isotherms, growth conditions, and electronic characteristics of the layers have been investigated. High quality HgMnTe layers have been obtained on lattice‐matched CdMnTe substrates.

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1985

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LPE growth conditions for Cd_1−xMn_xTe and Hg_1−xMn_xTe epitaxial layers

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LPE growth conditions for Cd_1−xMn_xTe and Hg_1−xMn_xTe epitaxial layers