Comparing with much valuable research on vibrational spectroscopy on low-k dielectrics in different substrates, this paper investigates the vibrational spectroscopy of low-k and ultra-low-k dielectric materials on patterned wafers. It is found that both Raman and FTIR spectroscopy are necessary as complement to characterize low-k and ultra-low-k dielectric materials on patterned wafers. Significant differences in the Raman and FTIR spectra between low-k and ultra-low-k dielectric materials are also observed. Moreover, Raman spectroscopy has an advantage in analyzing the mixed structure of low-k/ultra-low-k and Cu at nanometer-scaled sizes. The results in this paper show that Raman combined with FTIR spectroscopy is an effective tool to characterize dielectric thin film properties on patterned wafers.
Skip Nav Destination
Article navigation
September 2011
Research Article|
August 17 2011
Vibrational spectroscopy of low-k/ultra-low-k dielectric materials on patterned wafers
Jeffrey C. K. Lam;
Jeffrey C. K. Lam
Globalfoundries Singapore Pte. Ltd., Wooland Industrial Park D, Street 2,
Singapore
738406
Search for other works by this author on:
Maggie Y. M. Huang;
Maggie Y. M. Huang
a)
Globalfoundries Singapore Pte. Ltd., Wooland Industrial Park D, Street 2,
Singapore
738406
Search for other works by this author on:
Hao Tan;
Hao Tan
Globalfoundries Singapore Pte. Ltd., Wooland Industrial Park D, Street 2,
Singapore
738406
Search for other works by this author on:
Zhiqiang Mo;
Zhiqiang Mo
Globalfoundries Singapore Pte. Ltd., Wooland Industrial Park D, Street 2,
Singapore
738406
Search for other works by this author on:
Zhihong Mai;
Zhihong Mai
Globalfoundries Singapore Pte. Ltd., Wooland Industrial Park D, Street 2,
Singapore
738406
Search for other works by this author on:
Choun Pei Wong;
Choun Pei Wong
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences, Nanyang Technological University
, Singapore
637371
Search for other works by this author on:
Handong Sun;
Handong Sun
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences, Nanyang Technological University
, Singapore
637371
Search for other works by this author on:
Zexiang Shen
Zexiang Shen
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences, Nanyang Technological University
, Singapore
637371
Search for other works by this author on:
a)
Electronic mail: maggiehuang@globalfoundries.com
J. Vac. Sci. Technol. A 29, 051513 (2011)
Article history
Received:
April 25 2011
Accepted:
July 20 2011
Citation
Jeffrey C. K. Lam, Maggie Y. M. Huang, Hao Tan, Zhiqiang Mo, Zhihong Mai, Choun Pei Wong, Handong Sun, Zexiang Shen; Vibrational spectroscopy of low-k/ultra-low-k dielectric materials on patterned wafers. J. Vac. Sci. Technol. A 1 September 2011; 29 (5): 051513. https://doi.org/10.1116/1.3625099
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure
Appl. Phys. Lett. (January 2013)
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
AIP Advances (July 2014)
Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
J. Appl. Phys. (March 2008)
Roughening of porous SiCOH materials in fluorocarbon plasmas
J. Appl. Phys. (July 2010)
Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study
Journal of Applied Physics (August 2003)