Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition in this work. The experimental results indicate that DEMS-based low-k films have superior electrical and reliability performances than 3MS-based low-k films. Furthermore, the DEMS-based low-k films exhibit a higher mechanical strength, chemical and thermal stability, and better adhesion strength on various barrier films. Therefore, the DEMS-based films are promising low-k materials, which can be integrated in a very large scale integration circuit as an interlayer dielectric material.

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