Atomic layer deposition of Ru from $CpRu(CO)2Et$ using $O2$ gas and $O2$ plasma

The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium $(CpRu(CO)2Et)$ was used to develop an atomic layer deposition (ALD) process for ruthenium. $O2$ gas and $O2$ plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of $∼1Å$ was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of $∼16μΩcm$⁠. The $O2$ plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.