Ion implantation experiments of indium (In) into sputter-deposited undoped ZnO films were carried out to control the resistivity for layers of electronic device. Improvement of ZnO crystallinity after the ion implantation was revealed by x-ray diffraction patterns including a shift of lattice parameter, enhancement of peak intensity, and a decrease in full width at half maximum in . In-implanted ZnO crystallinity was greatly improved compared to results of the Ga and Al-implanted ZnO experiments. The resistivity of implanted ZnO film was decreased with over 11 orders of magnitude to with postimplantation annealing at . The ratio of resistivity between unimplanted ZnO and In-implanted one at was seven orders of magnitude after annealing at . The In-implanted ZnO would be suitable for fabricating source and drain regions of ZnO thin film transistors.
Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing
Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao; Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing. J. Vac. Sci. Technol. A 1 January 2010; 28 (1): 135–138. https://doi.org/10.1116/1.3259843
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