Ion implantation experiments of indium (In) into sputter-deposited undoped ZnO films were carried out to control the resistivity for layers of electronic device. Improvement of ZnO crystallinity after the ion implantation was revealed by x-ray diffraction patterns including a shift of lattice parameter, enhancement of peak intensity, and a decrease in full width at half maximum in . In-implanted ZnO crystallinity was greatly improved compared to results of the Ga and Al-implanted ZnO experiments. The resistivity of implanted ZnO film was decreased with over 11 orders of magnitude to with postimplantation annealing at . The ratio of resistivity between unimplanted ZnO and In-implanted one at was seven orders of magnitude after annealing at . The In-implanted ZnO would be suitable for fabricating source and drain regions of ZnO thin film transistors.
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January 2010
Research Article|
December 30 2009
Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing
Tokiyoshi Matsuda;
Tokiyoshi Matsuda
a)
Research Institute for Nanodevices,
Kochi University of Technology
, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan and Kochi Industrial Promotion Center
, C154, 185 Miyanokuchi, Tosayamada, Kami City, Kochi 782–0003, Japan
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Mamoru Furuta;
Mamoru Furuta
Research Institute for Nanodevices,
Kochi University of Technology
, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan and Kochi Industrial Promotion Center
, C154, 185 Miyanokuchi, Tosayamada, Kami City, Kochi 782–0003, Japan
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Takahiro Hiramatsu;
Takahiro Hiramatsu
Research Institute for Nanodevices,
Kochi University of Technology
, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan and Kochi Casio Co., Ltd.
, 2420 Kureda, Nankoku City, Kochi 783–0062, Japan
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Hiroshi Furuta;
Hiroshi Furuta
Research Institute for Nanodevices,
Kochi University of Technology
, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan and Kochi Industrial Promotion Center
, C154, 185 Miyanokuchi, Tosayamada, Kami City, Kochi 782–0003, Japan
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Takashi Hirao
Takashi Hirao
Research Institute for Nanodevices,
Kochi University of Technology
, 185 Miyanokuchi, Kami, Kochi 782-8502, Japan and Kochi Industrial Promotion Center
, C154, 185 Miyanokuchi, Tosayamada, Kami City, Kochi 782–0003, Japan
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a)
Electronic mail: matsuda.tokiyoshi@kochi-tech.ac.jp
J. Vac. Sci. Technol. A 28, 135–138 (2010)
Article history
Received:
January 23 2008
Accepted:
October 12 2009
Citation
Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao; Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing. J. Vac. Sci. Technol. A 1 January 2010; 28 (1): 135–138. https://doi.org/10.1116/1.3259843
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