Engineered thin films consisting of periodic arrays of silicon microcrystallites in a hydrogenated amorphous silicon host matrix have been prepared by plasma-enhanced chemical vapor deposition where the hydrogen dilution of silane is modulated in multiple cycles. These types of films have been guided by a phase evolution diagram, depicting the deposition conditions and film thickness at which the material exhibits amorphous, microcrystalline, or mixed-phase characteristics, developed for intrinsic Si:H prepared with varying dilution on unhydrogenated . Real time spectroscopic ellipsometry (RTSE) has been used in situ to noninvasively determine the phase evolution of the resulting hydrogenated mixed-phase silicon thin films and corroborated with dark-field transmission electron microscopy. Such tailored microstructures are of growing interest as components of thin film photovoltaic devices, and RTSE is shown to be a key technique for structure verification.
Analysis of controlled mixed-phase silicon thin films by real time spectroscopic ellipsometry
N. J. Podraza, Jing Li, C. R. Wronski, E. C. Dickey, R. W. Collins; Analysis of controlled mixed-phase silicon thin films by real time spectroscopic ellipsometry. J. Vac. Sci. Technol. A 1 November 2009; 27 (6): 1255–1259. https://doi.org/10.1116/1.3212893
Download citation file: