Low temperature grown polycrystalline $La0.7Sr0.3MnO3$ thin films on amorphous $SiO2$ substrates by rf magnetron sputtering Available to Purchase

The $La0.7Sr0.3MnO3$ thin films have been prepared on amorphous $SiO2$ substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of $350°C$⁠. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of $−2.4%$ was obtained in the present investigation even with low deposition temperature.