Investigation of interfacial layer development between thin $Al2O3$ films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100) Available to Purchase

The uncontrolled formation of an interfacial layer between high-$κ$ oxides and semiconductors is a major concern in advanced microelectronics not only for Si-based devices but also for those exploiting the higher mobility of Ge and GaAs. Using transmission electron microscopy, the authors investigate the interfacial layer formed between as-grown thin $Al2O3$ films, deposited using atomic layer deposition, and oxide free Si(100), Ge(100), and GaAs(100). In particular, they compare the effects of two different oxygen sources (⁠$H2O$ and $O3$⁠) on interfacial layer formation during the growth process. They show that no interfacial layer can be distinguished unambiguously between the $Al2O3$ films, grown using TMA and $H2O$ or $O3$⁠, and all the semiconductor substrates.