Undoped ZnO and ZnO:Al (0.1, 0.2, 0.5, 1.0, and ) films were deposited by rf magnetron sputtering. Controlled incorporation of in the Ar sputtering ambient for films grown at substrate temperatures up to results in mobilities exceeding when using targets containing 0.1 and . Temperature-dependent Hall measurements show evidence of phonon scattering as the dominant scattering mechanism in these lightly Al-doped films, while ionized impurity scattering appears increasingly dominant at higher doping levels. A combination of compositional and structural analysis shows that hydrogen expands the ZnO lattice normal to the plane of the substrate and desorbs from ZnO at according to temperature-programmed desorption and annealing experiments.
Effects of hydrogen ambient and film thickness on ZnO:Al properties
Joel N. Duenow, Timothy A. Gessert, David M. Wood, Anne C. Dillon, Timothy J. Coutts; Effects of hydrogen ambient and film thickness on ZnO:Al properties. J. Vac. Sci. Technol. A 1 July 2008; 26 (4): 692–696. https://doi.org/10.1116/1.2891261
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