The influence of plasma-enhanced chemical vapor deposition conditions on the dielectric performance of as-deposited TiO2 films was studied. It was found that the leakage current density was strongly correlated to the flatband voltage shift (ΔVFB). The value of ΔVFB increased linearly with the oxygen density, while an optimum was observed with respect to plasma power. By appropriate control of these two variables the electrical performance of as-deposited films approached those of annealed samples.

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