Optimizing the dielectric performance of $TiO2$ thin films through control of plasma-enhanced chemical vapor deposition process conditions

The influence of plasma-enhanced chemical vapor deposition conditions on the dielectric performance of as-deposited $TiO2$ films was studied. It was found that the leakage current density was strongly correlated to the flatband voltage shift $(ΔVFB)$⁠. The value of $ΔVFB$ increased linearly with the oxygen density, while an optimum was observed with respect to plasma power. By appropriate control of these two variables the electrical performance of as-deposited films approached those of annealed samples.