Thermal diffusivity of amorphous transparent conductive films, indium zinc oxide (IZO) films, with a thickness of has been analyzed quantitatively using a newly developed nanosecond thermoreflectance system. IZO films sandwiched by molybdenum (Mo) films were prepared on fused silica substrate by dc magnetron sputtering using an oxide ceramic IZO target ( and ZnO). The resistivity, carrier density, and Hall mobility of the IZO films ranged from , from , and from , respectively. The thermoreflectance signals were analyzed based on an analytical solution of the one dimensional heat flow across the three-layered film (Mo/IZO/Mo) system. The thermal diffusivity of the IZO films was , depending on the electrical resistivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in IZO films with various resistivities was found to be almost constant , which was about half of the one for polycrystalline indium tin oxide films.
Effect of electrical properties on thermal diffusivity of amorphous indium zinc oxide films
T. Ashida, A. Miyamura, Y. Sato, T. Yagi, N. Taketoshi, T. Baba, Y. Shigesato; Effect of electrical properties on thermal diffusivity of amorphous indium zinc oxide films. J. Vac. Sci. Technol. A 1 July 2007; 25 (4): 1178–1183. https://doi.org/10.1116/1.2743644
Download citation file: