Porous ultralow dielectric film pores were sealed by films of boron carbonitride, itself a dielectric. The films were deposited by chemical vapor deposition at on etched and ashed blanket films and patterned films of porous methyl silsesquioxane (PMSQ). The penetration of Ta through the boron carbonitride film and into the porous low substrate following exposure to at , or growth from and at , was used to test pore sealing. Tantalum profiles were evaluated using x-ray photoelectron spectroscopy depth profiling, back side secondary ion mass spectroscopy, and energy dispersive x-ray spectroscopy. A boron carbonitride film sealed PMSQ, which has an average pore diameter of before etching. The diffuse nature of the -PMSQ interface in electron energy loss profile maps suggests that some of the penetrates into the PMSQ until the pore openings are pinched off as the sealing film deposits.
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Research Article|
April 20 2007
Sealing ultralow porous dielectrics with thin boron carbonitride films
W. J. Ahearn;
W. J. Ahearn
Department of Chemical Engineering,
The University of Texas at Austin
, Austin, Texas 78712
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P. R. Fitzpatrick;
P. R. Fitzpatrick
Department of Chemical Engineering,
The University of Texas at Austin
, Austin, Texas 78712
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J. G. Ekerdt
J. G. Ekerdt
a)
Department of Chemical Engineering,
The University of Texas at Austin
, Austin, Texas 78712
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. A 25, 570–574 (2007)
Article history
Received:
February 17 2006
Accepted:
March 26 2007
Citation
W. J. Ahearn, P. R. Fitzpatrick, J. G. Ekerdt; Sealing ultralow porous dielectrics with thin boron carbonitride films. J. Vac. Sci. Technol. A 1 May 2007; 25 (3): 570–574. https://doi.org/10.1116/1.2731365
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