FeSe films have been grown on GaAs (001) substrates by low-pressure metal organic vapor deposition at different temperatures. X-ray diffraction analysis indicated that the FeSe films grown at substrate temperatures (Ts) between 220 and 340°C were preferentially oriented with tetragonal structure. It was not possible to deposit films at Ts above 400°C. The atomic molar ratios of SeFe increased with increasing the flow rate of H2SeFe(CO)5 and the growth temperature. The electronic property results showed that the conductive type of FeSe could be adjusted by controlling the growth temperature. The coercivity of FeSe decreased with increasing the growth temperature from 220to300°C due to the improvement of crystal quality.

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