Highly (100)-oriented electrically conductive (LNO) thin film with perovskite-type structure was deposited on Si(100) substrates by rf magnetron sputtering at substrate temperatures of 200, 300, 450, and with a series of 0%, 20%, 40%, and 60% oxygen partial pressures, respectively. The room temperature (RT) resistivity of LNO films decreases with decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature. The lowest RT resistivity of as-sputtered LNO thin films was about . This value could be as low as by postprocessing called high oxygen-pressure processing at and is comparable to the lowest one, , of epitaxial LNO thin film deposited on lattice-matched , , or sapphire single-crystal substrates.
Investigation of room temperature electrical resistivities of thin films deposited by rf magnetron sputtering and high oxygen-pressure processing
X. D. Zhang, X. J. Meng, J. L. Sun, G. S. Wang, T. Lin, J. H. Chu; Investigation of room temperature electrical resistivities of thin films deposited by rf magnetron sputtering and high oxygen-pressure processing. J. Vac. Sci. Technol. A 1 July 2006; 24 (4): 914–918. https://doi.org/10.1116/1.2198867
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