Highly (100)-oriented electrically conductive (LNO) thin film with perovskite-type structure was deposited on Si(100) substrates by rf magnetron sputtering at substrate temperatures of 200, 300, 450, and with a series of 0%, 20%, 40%, and 60% oxygen partial pressures, respectively. The room temperature (RT) resistivity of LNO films decreases with decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature. The lowest RT resistivity of as-sputtered LNO thin films was about . This value could be as low as by postprocessing called high oxygen-pressure processing at and is comparable to the lowest one, , of epitaxial LNO thin film deposited on lattice-matched , , or sapphire single-crystal substrates.
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July 2006
Research Article|
May 22 2006
Investigation of room temperature electrical resistivities of thin films deposited by rf magnetron sputtering and high oxygen-pressure processing
X. D. Zhang;
X. D. Zhang
a)
National Laboratory for Infrared Physics,
Shanghai Institute of Technical Physics
, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People’s Republic of China
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X. J. Meng;
X. J. Meng
National Laboratory for Infrared Physics,
Shanghai Institute of Technical Physics
, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People’s Republic of China
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J. L. Sun;
J. L. Sun
National Laboratory for Infrared Physics,
Shanghai Institute of Technical Physics
, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People’s Republic of China
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G. S. Wang;
G. S. Wang
National Laboratory for Infrared Physics,
Shanghai Institute of Technical Physics
, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People’s Republic of China
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T. Lin;
T. Lin
National Laboratory for Infrared Physics,
Shanghai Institute of Technical Physics
, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People’s Republic of China
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J. H. Chu
J. H. Chu
National Laboratory for Infrared Physics,
Shanghai Institute of Technical Physics
, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People’s Republic of China
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a)
Electronic mail: xd-zhang@mail.sitp.ac.cn
J. Vac. Sci. Technol. A 24, 914–918 (2006)
Article history
Received:
October 21 2005
Accepted:
March 30 2006
Citation
X. D. Zhang, X. J. Meng, J. L. Sun, G. S. Wang, T. Lin, J. H. Chu; Investigation of room temperature electrical resistivities of thin films deposited by rf magnetron sputtering and high oxygen-pressure processing. J. Vac. Sci. Technol. A 1 July 2006; 24 (4): 914–918. https://doi.org/10.1116/1.2198867
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