Characteristics of remote plasma atomic layer-deposited on Si, which has a very thin interlayer with and without remote plasma nitridation, have been investigated. The thin intermediate layer containing nitrogen, which was prepared by sequential and remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The film containing the remote plasma nitrided interlayer annealed at showed a lower equivalent oxide thickness of and a lower leakage current density ( at ) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of films annealed in two different ambient environments, and .
Characteristics of remote plasma atomic layer-deposited films on and plasma-pretreated Si substrates
Jihoon Choi, Seokhoon Kim, Jinwoo Kim, Hyunseok Kang, Hyeongtag Jeon, Choelhwyi Bae; Characteristics of remote plasma atomic layer-deposited films on and plasma-pretreated Si substrates. J. Vac. Sci. Technol. A 1 May 2006; 24 (3): 678–681. https://doi.org/10.1116/1.2194029
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