The model and the intrinsic carrier concentration of hexagonal ZnO single-crystal microtubes are investigated by capacitance-voltage (C-V) measurements. The film fabricated by hydrothermal method on p-type silicon (111) is composed of microtubes with hexagonal tubular structure, which have diameters of 34μm and lengths in the range of 1020μm. In this article, the structure of ZnOSi was analyzed and modeled, and the total capacitance model of the sample was deduced by analyzing the C-V characteristics of the ZnO. The small-signal equivalent scheme of the sample capacitance is also obtained. The C-V profiling calculated by the model agreed with the measured C-V curve. As a simple application of the model, the intrinsic carrier-concentration distribution of ZnO was extracted.

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