Germanium interactions are studied on surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on . Germanium chemical vapor deposition at 870 K on produces a adhesion layer, followed by growth of semiconducting . PVD of 0.7 ML Ge (accomplished by thermally cracking over a hot filament) also produces an initial layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting . Temperature programed desorption experiments of Ge from at 400–1100 K show desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on and allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on surfaces that is demonstrated.
Ge interactions on surfaces and kinetically driven patterning of Ge nanocrystals on
Scott K. Stanley, Sachin V. Joshi, Sanjay K. Banerjee, John G. Ekerdt; Ge interactions on surfaces and kinetically driven patterning of Ge nanocrystals on . J. Vac. Sci. Technol. A 1 January 2006; 24 (1): 78–83. https://doi.org/10.1116/1.2137328
Download citation file: