In situ spectroscopic ellipsometry has been employed to determine the properties of titanium nitride (TiN) films during plasma-assisted atomic layer deposition by alternating precursor dosing and plasma exposure. Besides monitoring the film thickness when optimizing the half reactions, it is shown that spectroscopic ellipsometry is a very valuable tool for in situ studies of (air-sensitive) film properties such as resistivity, and for investigating the nucleation phase during initial film growth.
Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
S. B. S. Heil, E. Langereis, A. Kemmeren, F. Roozeboom, M. C. M. van de Sanden, W. M. M. Kessels; Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry. J. Vac. Sci. Technol. A 1 July 2005; 23 (4): L5–L8. https://doi.org/10.1116/1.1938981
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