In this work, we investigated etching characteristics and mechanism of BST thin films using , and gas mixtures using an inductively coupled plasma (ICP) system. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. The etch rate of the BST thin films had a maximum value at 20% and 10% gas concentration, and decreased with further addition of or gas. The maximum etch rate of the BST thin films was at 30% . The maximum etch rate may be explained by the simultaneously concurrence of physical sputtering and chemical reaction. The characteristics of the plasma were analyzed using an optical emission spectroscopy (OES) and a Langmuir probe.
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Research Article| June 27 2005
Dry etching of thin films using an inductively coupled plasma
Gwan-Ha Kim, Kyoung-Tae Kim, Chang-II Kim; Dry etching of thin films using an inductively coupled plasma. J. Vac. Sci. Technol. A 1 July 2005; 23 (4): 894–897. https://doi.org/10.1116/1.1914814
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