Fabrication of $NiSi2$ nanocrystals embedded in $SiO2$ with memory effect by oxidation of the amorphous $Si∕Ni∕SiO2$ structure

$NiSi2$ nanocrystals embedded in the $SiO2$ layer exhibiting a memory effect have been formed by dry oxidation of an amorphous $Si∕Ni∕SiO2$ structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.