nanocrystals embedded in the layer exhibiting a memory effect have been formed by dry oxidation of an amorphous structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.
Fabrication of nanocrystals embedded in with memory effect by oxidation of the amorphous structure
P. H. Yeh, H. H. Wu, C. H. Yu, L. J. Chen, P. T. Liu, C. H. Hsu, T. C. Chang; Fabrication of nanocrystals embedded in with memory effect by oxidation of the amorphous structure. J. Vac. Sci. Technol. A 1 July 2005; 23 (4): 851–855. https://doi.org/10.1116/1.1913678
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