NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous SiNiSiO2 structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.

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