Systematic investigation of the SPM oxidation process of sputter-deposited ZrN thin films is reported. During the intrinsic part of the oxidation, the density of the oxide increases until the total oxide thickness is approximately twice the feature height. Further oxide growth is sustainable as the system undergoes plastic flow followed by delamination from the ZrN–silicon interface keeping the oxide density constant. ZrN exhibits superdiffusive oxidation kinetics in these single tip SPM studies. We extend this work to the fabrication of parallel oxide patterns 70 nm in height covering areas in the square centimeter range. This simple, quick, and well-controlled parallel nanolithographic technique has great potential for biomedical template fabrication.
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July 2005
Research Article|
June 27 2005
SPM oxidation and parallel writing on zirconium nitride thin films
N. Farkas;
N. Farkas
Departments of Physics, Chemistry, and Chemical Engineering, The University of Akron
, Akron, Ohio 44325
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J. R. Comer;
J. R. Comer
Departments of Physics, Chemistry, and Chemical Engineering, The University of Akron
, Akron, Ohio 44325
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G. Zhang;
G. Zhang
Departments of Physics, Chemistry, and Chemical Engineering, The University of Akron
, Akron, Ohio 44325
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E. A. Evans;
E. A. Evans
Departments of Physics, Chemistry, and Chemical Engineering, The University of Akron
, Akron, Ohio 44325
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R. D. Ramsier;
R. D. Ramsier
a)
Departments of Physics, Chemistry, and Chemical Engineering, The University of Akron
, Akron, Ohio 44325
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J. A. Dagata
J. A. Dagata
Precision Engineering Division, National Institute of Standards and Technology
, Gaithersburg, Maryland 20899-8212
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a)
Author to whom correspondence should be addressed; electronic mail: rex@uakron.edu
J. Vac. Sci. Technol. A 23, 846–850 (2005)
Article history
Received:
September 29 2004
Accepted:
January 03 2005
Citation
N. Farkas, J. R. Comer, G. Zhang, E. A. Evans, R. D. Ramsier, J. A. Dagata; SPM oxidation and parallel writing on zirconium nitride thin films. J. Vac. Sci. Technol. A 1 July 2005; 23 (4): 846–850. https://doi.org/10.1116/1.1864052
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