Conventional methods of surface preparation for III–V semiconductors, such as thermal annealing and sputtering, are severely limited for InN, resulting in In-enrichment and the introduction of donorlike defects. This is explained in terms of the unusually low -point conduction band minimum of InN with respect to its Fermi stabilization energy. Here, low energy atomic hydrogen irradiation is used to produce clean wurtzite InN surfaces without such detrimental effects. A combination of x-ray photoelectron spectroscopy (XPS) and high-resolution electron-energy-loss spectroscopy was used to confirm the removal of atmospheric contaminants. Low energy electron diffraction revealed a surface reconstruction after cleaning. Finally, XPS revealed intensity ratios consistent with a predominantly In polarity InN film terminated by In-adlayers in analogy with -plane GaN{0001}- surfaces.
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July 2005
Research Article|
June 07 2005
Clean wurtzite InN surfaces prepared with atomic hydrogen
L. F. J. Piper;
L. F. J. Piper
Department of Physics,
University of Warwick
, Coventry, CV4 7AL, United Kingdom
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T. D. Veal;
T. D. Veal
Department of Physics,
University of Warwick
, Coventry, CV4 7AL, United Kingdom
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M. Walker;
M. Walker
Department of Physics,
University of Warwick
, Coventry, CV4 7AL, United Kingdom
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I. Mahboob;
I. Mahboob
Department of Physics,
University of Warwick
, Coventry, CV4 7AL, United Kingdom
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C. F. McConville;
C. F. McConville
a)
Department of Physics,
University of Warwick
, Coventry, CV4 7AL, United Kingdom
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Hai Lu;
Hai Lu
Department of Electrical and Computer Engineering,
Cornell University
, Ithaca, New York 14853
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W. J. Schaff
W. J. Schaff
Department of Electrical and Computer Engineering,
Cornell University
, Ithaca, New York 14853
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a)
Electronic mail: c.f.mcconville@warwick.ac.uk
J. Vac. Sci. Technol. A 23, 617–620 (2005)
Article history
Received:
November 29 2004
Accepted:
April 04 2005
Citation
L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, Hai Lu, W. J. Schaff; Clean wurtzite InN surfaces prepared with atomic hydrogen. J. Vac. Sci. Technol. A 1 July 2005; 23 (4): 617–620. https://doi.org/10.1116/1.1927108
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