GdVO4:Eu3+ thin films were grown on Al2O3 (0001) substrates using pulsed-laser deposition. The crystallinity, surface morphology, and photoluminescence of the films were highly dependent on the deposition conditions, especially oxygen pressure and substrate temperature. The photoluminescence of GdVO4:Eu3+ films grown under optimized conditions indicated that Al2O3 (0001) is a promising substrate for the growth of high-quality GdVO4:Eu3+ phosphor films. In particular, the surface morphology and photoluminescence of GdVO4:Eu3+ films show very similar behavior as a function of oxygen pressure and substrate temperature. The emitted radiation was dominated by the red-emission peak at 620 nm and this phosphor is promising for flat-panel-display applications.

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