Analysis of conductivity of silicon films doped with tantalum, based on percolation theory, has been carried out. The dependence of resistivity on Ta content in the film and temperature has been presented. The films were deposited by magnetron sputtering on glass substrates. The films with the thickness of contained from 2% to 20% of Ta. Based on percolation theory, the effect of Ta content on resistivity and its dependence on temperature were determined.
Temperature dependence of resistivity of Si–Ta film deposited by magnetron sputtering
T. M. Berlicki, E. L. Prociów, J. Brzeziński, S. J. Osadnik; Temperature dependence of resistivity of Si–Ta film deposited by magnetron sputtering. J. Vac. Sci. Technol. A 1 May 2005; 23 (3): 503–505. https://doi.org/10.1116/1.1894685
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